Properties of phosphorus-doped (Zn,Mg)O thin films and device structures

Journal of Electronic Materials

Volumn 34, Issue 4, 2005, Pages 409-415

  Heo, Y W ^a   Kwon, Y W ^a   Li, Y ^a   Pearton, S J ^a   Norton, D P ^a  

^a University of Florida   (United States)

Author keywords

(Zn,Mg)O; Phosphorus doped; Wide bandgap semiconductor; Zinc oxide

Indexed keywords

ANNEALING; BAND STRUCTURE; CARRIER CONCENTRATION; DOPING (ADDITIVES); GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; OPTOELECTRONIC DEVICES; PHOSPHORUS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; ZINC OXIDE;

(ZN,MG)O; HALL MOBILITY; PHOSPHORUS DOPED; WIDE BANDGAP SEMICONDUCTOR;

THIN FILMS;

EID: 18244391186     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0120-7     Document Type: Conference Paper

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