Fabrication of midgap metal gates compatible with ultrathin dielectrics

Applied Physics Letters

Volumn 73, Issue 12, 1998, Pages 1676-1678

  Buchanan, D A ^a   McFeely, F R ^a   Yurkas, J J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001674003     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122242     Document Type: Review

References (5)

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4. H.-S. Wong and Y. Taur, Tech. Dig. Int. Electron Devices Meet., 705 (1993).
5. L. H. Kaplan and F. M. d'Heurle, J. Electrochem. Soc. 117, 694 (1970).