Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures

Electrochimica Acta

Volumn 50, Issue 15, 2005, Pages 3015-3027

  Hasegawa, Hideki ^a   Sato, Taketomo ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Anodic etching; Electrodeposition; III V semiconductors; Nanopore; Schottky barrier

Indexed keywords

ANODIC OXIDATION; ELECTRODEPOSITION; FERMI LEVEL; GALLIUM NITRIDE; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WIRES;

ANODIC ETCHING; ELECTROCHEMICAL PROCESSES; GATE CONTROL; III-IV SEMICONDUCTORS; NANOPORES; SCHOTTKY BARRIER;

ELECTROCHEMISTRY;

EID: 17744371847     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2004.11.066     Document Type: Conference Paper

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