Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching

Materials Science and Engineering C

Volumn 19, Issue 1-2, 2002, Pages 155-159

  Sabataitytappproaches the limit, J ^a   Šimkienappproaches the limit, I ^a   Bendorius, R A ^a,b   Grigoras, K ^a   Jasutis, V ^a   Pačebutas, V ^a   Tvardauskas, H ^a   Naudžius, K ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b VILNIUS GEDIMINAS TECHNICAL UNIVERSITY   (Lithuania)

Author keywords

AFM; Photoluminescence; Porous GaAs; XPS

Indexed keywords

POROUS LAYERS;

COMPOSITION; GALLIUM ALLOYS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE;

ETCHING;

ETCHING; MORPHOLOGY;

EID: 0037005872     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(01)00475-1     Document Type: Article

References (14)