Porous GaAs formed by a two-step anodization process

Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 661-664

  Hao, Maosheng ^a   Uchida, Hideo ^a   Shao, Chunlin ^a   Soga, Tetsuo ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Anodization; Porous gaas; Porous si

Indexed keywords

ANODIC OXIDATION; CRYSTAL GROWTH; CRYSTAL ORIENTATION; LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; POROSITY; POROUS SILICON; POTASSIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SOLUTIONS; X RAY CRYSTALLOGRAPHY;

POTASSIUM HYDROXIDE; TWO STEP ANODIZATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031212675     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00196-6     Document Type: Article

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