Electrochemical formation of self-assembled InP nanopore arrays and their use as templates for molecular beam epitaxy growth of InGaAs quantum wires and dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 977-981

  Hirano, Tetsuro ^a   Ito, Akira ^a   Sato, Taketomo ^a   Ishikawa, Fumitaro ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Electrochemical anodization; InGaAs; MBE growth; Nanopore; PL; Porous InP; Template

Indexed keywords

COMPOSITION; DENSITY (SPECIFIC GRAVITY); ELECTROCHEMISTRY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PORE SIZE; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

ELECTROCHEMICAL ANODIZATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0036478684     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.977     Document Type: Conference Paper

References (8)