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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4609-4615

Electrical properties of nanometer-sized Schottky contacts on n-GaAs and n-InP formed by in situ electrochemical process

(4) Sato, Taketomo a Kasai, Seiya a Okada, Hiroshi a Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

AFM; Computer simulation; Conductive probe; Electrochemical process; GaAs; I V characteristics; InP; Nanometer sized Schottky contact; SEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; FERMI LEVEL; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

SCHOTTKY CONTACTS;

ELECTRIC CONTACTS;

EID: 0034225107 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.4609 Document Type: Article

Times cited : (14)

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