Electrochemical formation of GaAs/Bi Schottky barriers

Applied Physics Letters

Volumn 75, Issue 20, 1999, Pages 3135-3137

  Vereecken, Philippe M ^a   Searson, Peter C ^a  

^a Johns Hopkins University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000958158     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125255     Document Type: Article

References (24)

1. G. E. Smith, G. A. Baraff, and J. M. Rowell, Phys. Rev. 135, A1118 (1964).
2. M. Lu, R. J. Zieve, A. van Hulst, H. M. Jaeger, T. F. Rosebaum, and S. Radelaar, Phys. Rev. B 53, 1609 (1996).
3. J. H. Mangez, J. P. Issi, and J. Heremans, Phys. Rev. B 14, 4381 (1976).
4. K. Liu, C. L. Chien, P. C. Searson, and K. Yu-Zhang, Appl. Phys. Lett. 73, 1436 (1998).
5. Z. Zhang, X. Sun, M. S. Dresselhaus, J. Y. Ying, and J. P. Heremans, Appl. Phys. Lett. 73, 1589 (1998).
6. F. Y. Yang, K. Liu, K. Hong, D. H. Reich, P. C. Searson, and C. L. Chien, Science 284, 1335 (1999).
7. J. L. Sullivan, W. Yu, and S. Saied, Appl. Surf. Sci. 90, 309 (1995).
8. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Oxford Science, Oxford, 1998).
9. J. R. Waldrop, J. Vac. Sci. Technol. B 2, 445 (1984).
10. G. Myburg, F. D. Auret, W. E. Meyer, C. W. Louw, and M. J. van Staden, Thin Solid Films 325, 181 (1998).
11. We note that these are the values obtained from current-voltage curves with no correction for image force lowering.
12. W. Monch, Surf. Sci. 299/300, 928 (1994).
13. S. Lingier and W. P. Gomes, Ber. Bunsenges. Phys. Chem. 95, 170 (1991).
14. B. H. Erne, M. Stchakovsky, F. Ozanam, and J.-N. Chazalviel, J. Electrochem. Soc. 145, 447 (1998).
15. J. P. Sullivan, R. T. Tung, M. R. Pinto, and W. R. Graham, J. Appl. Phys. 70, 7403 (1991).
16. R. L. Van Meirhaeghe, in Frontiers in Nanoscale Science of Micron/Submicron Devices, NATO ASI Series E, Vol. 238, edited by A. P. Jauho and E. V. Buzaneva (Kluwer, Dordrecht, 1996), p. 315.
17. S. J. Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1992), p. 82.
18. Y. P. Song, R. L. Van Meirhaeghe, W. H. Laflere, and F. Cardon, Solid-State Electron. 29, 633 (1986).
19. M. J. Turner and E. H. Rhoderick, Solid-State Electron. 11, 291 (1968).
20. G. Oskam, L. Bart, D. Vanmaekelbergh, and J. J. Kelly, J. Appl. Phys. 74, 3238 (1993).
21. P. M. Vereecken, G. M. Vanalme, R. L. Van Meirhaeghe, F. Cardon, and W. P. Gomes, J. Chem. Soc., Faraday Trans. 92, 4069 (1996).
22. K. Strubbe, P. M. Vereecken, and W. P. Gomes, J. Electrochem. Soc. 146, 1412 (1999).
23. G. A. Baraff and M. Schlüter, Phys. Rev. Lett. 55, 1327 (1985).
24. G. A. Baraff and M. Schlüter, Phys. Rev. B 33, 7346 (1986).