Molecular-beam epitaxy and device applications of III-V semiconductor nanowires

MRS Bulletin

Volumn 24, Issue 8, 1999, Pages 25-30

  Hasegawa, Hideki ^a   Fujikura, Hajime ^a   Okada, Hiroshi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; LITHOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

SEMICONDUCTOR NANOWIRES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032631590     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400052866     Document Type: Article

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