Electrical properties of nanometer-sized schottky contacts for gate control of III-V single electron devices and quantum devices

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 2021-2025

  Sato, Taketomo ^a   Kasai, Seiya ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Computer simulation; Electrochemical process; Gaas; I V characteristics; InP; Nanometer sized schottky contact; Potential controllability

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROCHEMISTRY; FERMI LEVEL; SEMICONDUCTING GALLIUM ARSENIDE; THERMIONIC EMISSION;

ELECTROCHEMICAL PROCESSES; NANOMETER-SIZED SCHOTTKY CONTACTS; QUANTUM DEVICES;

GATES (TRANSISTOR);

EID: 0035267638     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2021     Document Type: Article

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