Large Schottky barrier heights on indium phosphide-based materials realized by in-situ electrochemical process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1811-1817

  Sato, Taketomo ^a   Uno, Shouichi ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AFM; Anodic etching; DIGS model; Electrochemical process; InAlAs; InGaAs; InP; Platinum; Pulse plating; Schottky barrier

Indexed keywords

EID: 0345404073     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1811     Document Type: Article

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