Evolution of interface properties of electrodeposited Ni/GaAs(001) contacts upon annealing

Journal of Applied Physics

Volumn 95, Issue 11 II, 2004, Pages 6549-6551

  Scheck, C ^a   Liu, Y K ^a   Evans, P ^a   Schad, R ^a   Zangari, G ^b  

^a University of Alabama   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; GALVANOSTATIC DEPOSITION; ROOM TEMPERATURE (RT); SCHOTTKY BARRIER HEIGHTS;

AMMONIA; ANNEALING; ARSENIC; DEPOSITION; ELECTRODEPOSITION; ELECTRODES; ELECTROPLATING; EVAPORATION; FERROMAGNETIC MATERIALS; GALLIUM; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

NICKEL ALLOYS;

EID: 2942631286     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1667418     Document Type: Conference Paper

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