Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

Thin Solid Films

Volumn 478, Issue 1-2, 2005, Pages 206-217

  Teren, Andrew R ^a   Thomas, Reji ^a   He, Jiaqing ^a   Ehrhart, Peter ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Chemical vapor deposition (CVD); Dielectics; Gate oxide; HfO2

Indexed keywords

CRYSTALLIZATION; DENSITY (SPECIFIC GRAVITY); DIELECTRIC FILMS; FILM GROWTH; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; PERMITTIVITY; PHASE TRANSITIONS; SUPERCONDUCTING TRANSITION TEMPERATURE;

GATE-OXIDES; HFO2; PRECURSORS; PULSED INJECTION;

THIN FILMS;

EID: 14544287804     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.055     Document Type: Article

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