Growth of (Ba,Sr)TiO3 thin films by MOCVD: Stoichiometry effects

Integrated Ferroelectrics

Volumn 45, Issue , 2002, Pages 59-68

  Ehrhart, P ^a   Fitsilis, F ^a   Regnery, S ^a,b   Waser, R ^a   Schienle, F ^b   Schumacher, M ^b   Juergensen, H ^b   Krumpen, W ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

(Ba,Sr)TiO3; MOCVD; Multi wafer reactor, stoichiometry effects, nucleation and growth, permittivity, dead layer, leakage current

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; STOICHIOMETRY; THICKNESS MEASUREMENT; TITANIUM COMPOUNDS;

COLUMNAR STRUCTURES; LIQUID DELIVERY SYSTEMS; MOLAR SOLUTIONS; PLANETARY MULTI WAFERS;

THIN FILMS;

EID: 0038071391     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580215342     Document Type: Article

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