Comparison of MOCVD precursors for Hf1-xSixO2 gate dielectric deposition

Materials Research Society Symposium - Proceedings

Volumn 716, Issue , 2002, Pages 273-278

  Hendrix, B C ^a   Borovik, A S ^a   Wang, Z ^a   Xu, C ^a   Roeder, J F ^a   Baum, T H ^a   Bevan, M J ^b   Visokay, M R ^b   Chambers, J J ^b   Rotondaro, A L P ^b   Bu, H ^b   Colombo, L ^b  

^a ENTEGRIS INC   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; OXIDATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ALCOXIDE; DIKETONATE; HAFNIUM SILICATE;

HAFNIUM COMPOUNDS;

EID: 0036955069     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-716-b6.7     Document Type: Conference Paper

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