XRF and SIMS/SNMS analyses of BaxSr1-xTiO3 dielectrics

Analytical and Bioanalytical Chemistry

Volumn 375, Issue 7, 2003, Pages 906-911

  Breuer, U ^a   Krumpen, W ^a   Fitsilis, F ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

BST; DRAM; MOCVD; SIMS; SNMS; XRF

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; FERROELECTRIC MATERIALS; FLUORESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SURFACE CHEMISTRY; THIN FILMS;

BST; PLANETARY REACTORS; SNMS; XRF;

BARIUM COMPOUNDS;

CONFERENCE PAPER;

EID: 4344648304     PISSN: 16182642     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00216-003-1806-4     Document Type: Conference Paper

References (5)

1. Summerfelt SR (1997) In: Ramesh R (ed) Thin film ferroelectric materials and devices. Kluwer, Boston, pp 1-12
2. Jones RE Jr, Desu SB (1996) Process integration for nonvolatile ferroelectric memory fabrication, MRS Bulletin 21:6
3. Fitsilis F et al (2001) J Eur Cer Soc 21:1547
4. Ehrhart P et al (2001) Mat Res Soc Symp Proc 655:CC9.4
5. Williams P (1992) Quantitative analysis using sputtering techniques: secondary ion and sputtered neutral mass spectrometry. In: Briggs D, Seah MP (eds) Practical surface analysis, 2nd edn, vol 2: ion and neutral spectroscopy. Wiley, New York, pp 177-228