Microstructure and interfaces of HfO2 thin films grown on silicon substrates

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 295-303

  He, J Q ^a,b   Teren, A ^a   Jia, C L ^a   Ehrhart, P ^a   Urban, K ^a   Waser, R ^a   Wang, R H ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b WUHAN UNIVERSITY   (China)

Author keywords

A1. Interfacial layers; A1. Transmission electron microscopy; A3. Thin films; B1. HfO2; B3. Gate oxide

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTALLINE MATERIALS; DIFFUSION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; THERMODYNAMIC STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GATE OXIDE; HFO2; INTERFACIAL LAYERS;

HAFNIUM COMPOUNDS;

EID: 0842308455     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.10.026     Document Type: Article

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