A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC

IEEE Transactions on Microwave Theory and Techniques

Volumn 52, Issue 1 I, 2004, Pages 2-9

  Lee, Jong Wook ^a   Webb, Kevin J ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Gallium nitride (GaN) high electron mobility transistor (HEMT); Large signal modeling; Microwave power field effect transistors (FETs); Pulsed measurements; Self heating effects; Silicon carbide (SiC)

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; GALLIUM NITRIDE; MICROWAVE DEVICES; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS;

LARGE-SIGNAL MODELING; MICROWAVE POWER FIELD-EFFECT TRANSISTORS; PULSED MEASUREMENTS; SELF-HEATING EFFECTS; TEMPERATURE-DEPENDENT NONLINEAR ANALYTIC MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1242263490     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.821227     Document Type: Article

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