Bias-dependent performance of high-power AlGaN/GaN HEMTs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 378-380

  Wu, Y F ^a   Chavarkar, P M ^a   Moore, M ^a   Parikh, P ^a   Mishra, U K ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE;

ALUMINUM GALLIUM NITRIDE; POWER ADDED EFFICIENCY; POWER TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035717519     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. High Al-content AlGaN/GaN HEMTs on SiC substrates with very-high performance