High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 12, 2001, Pages 2486-2493

  Green, Bruce M ^a,b,c   Tilak, Vinayak ^b   Lee, Sungjae ^a,d   Kim, Hyungtak ^a,b   Smart, Joseph A ^e   Webb, Kevin J ^a,d   Shealy, James R ^a,b   Eastman, Lester F ^a,b  

^a IEEE   (United States)

^b Cornell University   (United States)

^c MOTOROLA INC   (United States)

^d PURDUE UNIVERSITY   (United States)

^e RF Nitro Communications Inc   (United States)

Author keywords

Broad band amplifier; Cascode; Distributed amplifier; GaN; High electron mobility transistor; Silicon carbide

Indexed keywords

NONUNIFORM DISTRIBUTED AMPLIFIERS (NDA);

BANDWIDTH; BROADBAND AMPLIFIERS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035686434     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.971640     Document Type: Conference Paper

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