Wide bandgap semiconductor devices and MMICs for RF power applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 385-388

  Palmour, J W ^a   Sheppard, S T ^a   Smith, R P ^a   Allen, S T ^a   Pribble, W L ^a   Smith, T J ^a   Ring, Z ^a   Sumakeris, J J ^a   Saxler, A W ^a   Milligan, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ENERGY GAP; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOS CAPACITORS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES;

METAL-INSULATOR-METAL CAPACITOR; METAL-INSULATOR-METAL INSULATOR; POWER ADDED EFFICIENCY; POWER DENSITY;

MESFET DEVICES;

EID: 0035717718     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
2. High Al-content AlGaN/GaN HEMTs with very high performance
3. Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substrates
4. High power demonstration at 10 GHz with GaN/AlGaN HEMT hybrid amplifiers
5. A 50-W AlGaN/GaN HEMT amplifier
6. Power density comparison between microwave power MESFET's processed on conductive and semi-insulating wafer
7. Surface induced instabilities in 4H-SiC microwave MESFETs
8. Undoped semi-insulating SiC grown by the seeded sublimation method