An improved deep submicrometer mosfet rf nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 12, 2000, Pages 2361-2369

  Heo, Deukhyoun ^a   Gebara, Edward ^b   Chen, Yi Jan Emery ^a   Yoo, Seung Yup ^a   Hamai, Michael ^a   Youngsuk Suh, Joy Laskar ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c RF MICRO DEVICES   (United States)

Author keywords

Admittance; Analog circuits; Avalanche breakdown; Capacitance; Coupling circuit; Harmonic distortion; Intermodulation distortion (IMD); Modeling; MOSFETs; Pulse measurements; Resistance; Silicon; Simulation

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; NONLINEAR DISTORTION; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

HARMONIC DISTORTION; INTERMODULATION DISTORTION (IMD);

MOSFET DEVICES;

EID: 0034428620     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.898985     Document Type: Article

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