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Volumn 48, Issue 12, 2000, Pages 2352-2360

Bias-dependent linear scalable millimeter-wave fet model

Author keywords

Equivalent circuits; Microwave field effect transistors (FETs); Millimeter wave FETs; Modeling

Indexed keywords

ELECTRIC NETWORK ANALYSIS; EQUIVALENT CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS;

EID: 0034430565     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.898984     Document Type: Article
Times cited : (77)

References (22)
  • 2
    • 0025465290 scopus 로고
    • Broad-band determination of the FET smallsignal equivalent circuit
    • July
    • M. Berroth and R. Bosch, "Broad-band determination of the FET smallsignal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 38, pp. 891-897, July 1989.
    • (1989) IEEE Trans. Microwave Theory Tech. , vol.38 , pp. 891-897
    • Berroth, M.1    Bosch, R.2
  • 3
    • 0024751374 scopus 로고
    • Bias dependence of the MODFET intrinsic model elements values at microwave frequencies
    • B. Hughes and P. J. Tasker, "Bias dependence of the MODFET intrinsic model elements values at microwave frequencies," IEEE Trans. Electron Devices, vol. 36, pp. 2267-2273, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 2267-2273
    • Hughes, B.1    Tasker, P.J.2
  • 4
    • 0028467823 scopus 로고
    • FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-A new concept
    • July
    • F. Lin and G. Kompa, "FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-A new concept," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 1114-1121, July 1994.
    • (1994) IEEE Trans. Microwave Theory Tech. , vol.42 , pp. 1114-1121
    • Lin, F.1    Kompa, G.2
  • 5
    • 0033318971 scopus 로고    scopus 로고
    • Measurement-based mathematical active device modeling for high frequency circuit simulation
    • June
    • D. E. Root, "Measurement-based mathematical active device modeling for high frequency circuit simulation," IEICE Trans. Electron., vol. E82-C, no. 6, pp. 924-936, June 1999.
    • (1999) IEICE Trans. Electron. , vol.E82-C , Issue.6 , pp. 924-936
    • Root, D.E.1
  • 6
    • 0016603256 scopus 로고
    • Signal and noise properties of gallium arsenide microwave field-effect transistors
    • R. A. Pucel, H. A. Haus, and H. Statz, "Signal and noise properties of gallium arsenide microwave field-effect transistors," Adv. Electron. Electron Phys., vol. 38, pp. 195-266, 1975.
    • (1975) Adv. Electron. Electron Phys. , vol.38 , pp. 195-266
    • Pucel, R.A.1    Haus, H.A.2    Statz, H.3
  • 7
    • 0019027751 scopus 로고
    • Equivalent circuit model of FET including distributed gate effects
    • R. L. Kuvas, "Equivalent circuit model of FET including distributed gate effects," IEEE Trans. Electron Devices, vol. ED-27, pp. 1193-1195, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1193-1195
    • Kuvas, R.L.1
  • 8
    • 0024645989 scopus 로고
    • Intrinsic GaAs MESFET equivalent circuit models generated from two-dimensional simulations
    • W. R. Curtice, "Intrinsic GaAs MESFET equivalent circuit models generated from two-dimensional simulations," IEEE Trans. Computer-Aided Design, vol. 8, pp. 395-402, 1989.
    • (1989) IEEE Trans. Computer-aided Design , vol.8 , pp. 395-402
    • Curtice, W.R.1
  • 9
    • 0025416459 scopus 로고
    • Determination of equivalent network parameters of short-gate-length modulation-doped field-effect transistors
    • S.-T. Fu, S.-M. Liu, and M. B. Das, "Determination of equivalent network parameters of short-gate-length modulation-doped field-effect transistors," IEEE Trans. Electron Devices, vol. 37, pp. 888-901, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 888-901
    • Fu, S.-T.1    Liu, S.-M.2    Das, M.B.3
  • 10
    • 0027092244 scopus 로고
    • Direct extraction of all four transistor noise parameters from a single noise figure measurement
    • P. J. Tasker, W. Reinert, J. Braunstein, and M. Schlechtweg, "Direct extraction of all four transistor noise parameters from a single noise figure measurement," in Proc. 22nd Eur. Microwave Conf., 1992, pp. 157-162.
    • (1992) Proc. 22nd Eur. Microwave Conf. , pp. 157-162
    • Tasker, P.J.1    Reinert, W.2    Braunstein, J.3    Schlechtweg, M.4
  • 11
    • 0346494989 scopus 로고
    • Design and characterization of high performance 60 GHz pseudomorphic MODFET LNA's in CPW-technology based on accurate S-parameter and noise models
    • M. Schlechtweg, W. Reinert, P. J. Tasker, R. Bosch, J. Braunstein, A. Hulsmann, and K. Kohler, "Design and characterization of high performance 60 GHz pseudomorphic MODFET LNA's in CPW-technology based on accurate S-parameter and noise models," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2445-2451, 1992.
    • (1992) IEEE Trans. Microwave Theory Tech. , vol.40 , pp. 2445-2451
    • Schlechtweg, M.1    Reinert, W.2    Tasker, P.J.3    Bosch, R.4    Braunstein, J.5    Hulsmann, A.6    Kohler, K.7
  • 12
    • 0026880268 scopus 로고
    • Highly consistent FET model parameter extraction based on broadband S-parameter measurements
    • paper IF1 F-6
    • G. Kompa and M. Novotny, "Highly consistent FET model parameter extraction based on broadband S-parameter measurements," in IEEE MTT-S Dig., 1992. paper IF1 F-6.
    • (1992) IEEE MTT-S Dig.
    • Kompa, G.1    Novotny, M.2
  • 13
    • 79952623367 scopus 로고
    • Pseudomorphic MODFET CAE models for millimeter wave LNA MMIC design and realization: Model extraction and validation
    • London, U.K.
    • P. J. Tasker, "Pseudomorphic MODFET CAE models for millimeter wave LNA MMIC design and realization: Model extraction and validation," in Proc. CAE, Modeling Measurement Verification Workshop, London, U.K., 1994, pp. 116-121.
    • (1994) Proc. CAE, Modeling Measurement Verification Workshop , pp. 116-121
    • Tasker, P.J.1
  • 14
    • 0029220507 scopus 로고
    • New MODFET small signal model required for millimeter-wave MMIC design: Extraction and validation to 120 GHz
    • paper WE3C-1
    • P. J. Tasker and J. Braunstein, "New MODFET small signal model required for millimeter-wave MMIC design: Extraction and validation to 120 GHz," in IEEE MTT-S Dig., 1995. paper WE3C-1.
    • (1995) IEEE MTT-S Dig.
    • Tasker, P.J.1    Braunstein, J.2
  • 15
    • 0029221711 scopus 로고
    • Atable based bias and temperature dependent small signal and noise equivalent circuit model
    • paper WE3C-4
    • P. B.Winson, S. M. Lardizabal, and L. Dunleavy, "Atable based bias and temperature dependent small signal and noise equivalent circuit model," in IEEE MTT-S Dig., 1995. paper WE3C-4.
    • (1995) IEEE MTT-S Dig.
    • Winson, P.B.1    Lardizabal, S.M.2    Dunleavy, L.3
  • 16
    • 79952623629 scopus 로고    scopus 로고
    • Exploitation of the temperature noise model in MMIC design and in the measurement of noise parameters
    • presented at the
    • P. J. Tasker, "Exploitation of the temperature noise model in MMIC design and in the measurement of noise parameters," presented at the MTT-S Workshop, 1996.
    • (1996) MTT-S Workshop
    • Tasker, P.J.1
  • 17
  • 18
    • 0031188871 scopus 로고    scopus 로고
    • Fast, automatic and accurate HFET small-signal characterization
    • July
    • M. Garcia, K. Yhland, H. Zirath, I. Angelov, and N. Rorsman, "Fast, automatic and accurate HFET small-signal characterization," Microwave J., pp. 102-117, July 1997.
    • (1997) Microwave J. , pp. 102-117
    • Garcia, M.1    Yhland, K.2    Zirath, H.3    Angelov, I.4    Rorsman, N.5
  • 19
    • 0029231991 scopus 로고
    • On-wafer calibration techniques for measurement of microwave circuits and devices on thin substrates
    • J. Pla, W. Struble, and F. Colomb, "On-wafer calibration techniques for measurement of microwave circuits and devices on thin substrates," in IEEE MTT-S Dig., 1995, pp. 1045-1048.
    • (1995) IEEE MTT-S Dig. , pp. 1045-1048
    • Pla, J.1    Struble, W.2    Colomb, F.3
  • 20
    • 79952621463 scopus 로고    scopus 로고
    • private communication
    • J. Orr, private communication.
    • Orr, J.1
  • 21
    • 0032306569 scopus 로고    scopus 로고
    • Interfacial gate resistance in Schottky-barrier gate field-effect transistors
    • Dec.
    • H. Rohdin, N. Moll, C.-Y. Su, and G. Lee, "Interfacial gate resistance in Schottky-barrier gate field-effect transistors," IEEE Trans. Electron Devices, vol. 45, pp. 2407-2416, Dec. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 2407-2416
    • Rohdin, H.1    Moll, N.2    Su, C.-Y.3    Lee, G.4
  • 22
    • 34250325015 scopus 로고    scopus 로고
    • A production FET modeling and library generation system (FLAMBE: Fast library and model generation engine)
    • D. McGinty, D. E. Root, and J. Perdomo, "A production FET modeling and library generation system (FLAMBE: Fast library and model generation engine)," in Proc. Int. Conf. GaAs Manufacturing MANTECH 97, 1997, pp. 145-148.
    • (1997) Proc. Int. Conf. GaAs Manufacturing MANTECH 97 , pp. 145-148
    • McGinty, D.1    Root, D.E.2    Perdomo, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.