Extensions of the chalmers nonlinear HEMT and MESFET model

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 10 PART 1, 1996, Pages 1664-1674

  Angelov, Iltcho ^a,b   Bengtsson, Lars ^b   Garcia, Mikael ^a,b  

^a IEEE

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ELECTROMAGNETIC DISPERSION; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; THERMAL EFFECTS; TRANSCONDUCTANCE;

CHALMERS NONLINEAR MODEL; DRAIN CURRENT; GATE VOLTAGE; POWER SERIES FUNCTION; SMALL SIGNAL S PARAMETER MEASUREMENTS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0030257471     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.538957     Document Type: Article

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