Self-heating effects in silicon carbide MESFETs

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2221-2227

  Royet, A S ^a,b   Ouisse, T ^a,b   Gabon, B ^a   Noblanc, O ^a,b   Arnodo, C ^a   Brylinski, C ^a,b  

^a CNRS   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; HIGH TEMPERATURE EFFECTS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY;

DIFFERENTIAL CONDUCTANCE; DRAIN VOLTAGES; HIGH THERMAL CONDUCTIVITY; POWER DISSIPATION; SELF HEATING EFFECTS;

MESFET DEVICES;

EID: 0034317665     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877187     Document Type: Article

References (24)

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