Validation of an analytical large signal model for AlGaN/GaN HEMT's on SiC substrates

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 2000, Pages 237-241

  Green, Bruce M ^a   Kim, Hyungtak ^a   Tilak, Vinayak ^a   Shealy, James R ^a   Smart, Joseph A ^a   Eastman, Lester F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; GALLIUM NITRIDE; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

ALGAN GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS; ANALYTICAL LARGE SIGNAL MODEL; POWER DENSITY; SILICON CARBIDE SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034593947     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Y.-F. Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B.P. Keller, and U.K. Mishra. High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance. In IEDM Digest, pages 925-927, Washington D.C., Dec. 1999.
2. B.M. Green, K.K. Chu, V. Tilak, J.A. Smart, J.R. Shealy, and L.F. Eastman. Validation of a Large Signal Model for AlGaN/GaN HEMTs. In 2000 MTT-S Symposium Digest, 2000.
3. W.R. Curtice and M. Ettenberg. A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers. IEEE Trans. Microwave Theory Tech., MTT-33:1383-1394, Dec. 1985.
4. B.M. Green, K.K. Chu, E.M. Chumbes, J.A. Smart, J.R. Shealy, and L.F. Eastman. The Role of Surface Passivation on the microwave characteristics of AlGaN/GaN HEMTs. IEEE Electron Device Lett., June 2000.
5. K.K. Chu, E.M. Chumbes, J.A. Smart, B.M. Green, J.R. Shealy, and L.F. Eastman. Undoped AlGaN/GaN HEMTs on SiC substrates. IEEE Electron Device Lett. Submitted for publication, 1999.
6. J.A. Smart, A.T. Schremer, N.G. Weimann, O. Ambacher, L.F. Eastman, and J.R. Shealy. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers. Appl. Phys. Lett., 75(3):388-390, 19 July 1999.
7. W.R. Curtice. CFET User's Manual. W.R. Curtice Consulting, 1998.
8. W.K. Kruppa and J.B. Boos. Low-Frequency Transconductance Dispersion in InAlAs/InGaAs/InP HEMT's with Single and Double-Recessed Gate Structures. IEEE Trans. Electron Devices, 1997.