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Volumn 90, Issue 7, 2001, Pages 3377-3382

Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035477012     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1402144     Document Type: Article
Times cited : (47)

References (54)
  • 38
    • 0040987443 scopus 로고    scopus 로고
    • note
    • The as-grown n-type epilayer was unsuitable to determine exact bulk life-time because of the reemission effect. The reemission effect vanishes for p-type and irradiated n-type epilayers.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.