Annealing processes of vacancy-type defects in electron-irradiated and as-grown 6H-SiC studied by positron lifetime spectroscopy

Journal of Applied Physics

Volumn 80, Issue 10, 1996, Pages 5639-5645

  Kawasuso, Atsuo ^a   Itoh, Hisayoshi ^a   Okada, Sohei ^a   Okumura, Hajime ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000690341     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363615     Document Type: Review

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