Diffusion and carrier recombination by interstitials in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 16, 1998, Pages 9727-9735

  Harrison, Walter A ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042549146     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.9727     Document Type: Article

References (11)

1. Y. Bar-Yam and J. D. Joannopoulos, Phys. Rev. B 30, 2216 (1984).
2. P. E. Blöchl, E. Smargiassi, R. Car, D. B. Laks, W. Andreoni, and S. T. Pantelides, Phys. Rev. Lett. 70, 2435 (1993).
3. W. A. Harrison, Phys. Rev. B 31, 2121 (1985).
4. W. Shockley and J. L. Moll, Phys. Rev. 119, 1480 (1960).
5. W. Shockley and J. T. Last, Phys. Rev. 107, 392 (1957).
6. S. J. Clark and G. J. Ackland, Phys. Rev. B 56, 47 (1997).
7. C. S. Rafferty, G. H. Gilmer, M. Jaraiz, D. Eaglesham, and H.-J. Gossmann, Appl. Phys. Lett. 68, 23 956 (1996).
8. V. N. Abakumov, V. J. Perel, and I. N. Yassievich, Nonradiative Recombination in Semiconductors (North-Holland, Amsterdam, 1991).
9. K. Huang, and A. Rhys, Proc. R. Soc. London, Ser. A 204, 406 (1950).
10. R. Liu, C.-Y. Lu, J. J. Sung, C.-S. Pai, and N.-S. Tsai, Solid-State Electron. 38, 1473 (1995).
11. J. M. Wills and W. A. Harrison, Phys. Rev. B 28, 4363 (1983).