Boron in SiC: structure and kinetics

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 447-450

  Bockstedte, Michel ^a   Mattausch, Alexander ^a   Pankratov, Oleg ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARBON; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ION IMPLANTATION; POINT DEFECTS; REACTION KINETICS; STABILITY; SUBSTITUTION REACTIONS;

AB INITIO DEFECT ENERGETICS; AB INITIO METHOD; BORON MIGRATION; BORON RELATED DEFECTS;

SILICON CARBIDE;

EID: 14344278564     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.447     Document Type: Article

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