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Volumn 389-393, Issue 1, 2002, Pages 471-476
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The nature and diffusion of intrinsic point defects in SiC
a
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Author keywords
Defect complexes; Interstitials; Self diffusion; Vacancies
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Indexed keywords
ANNEALING;
DIFFUSION;
LATTICE VIBRATIONS;
POINT DEFECTS;
VACANCIES;
SILICON CARBIDE;
DEFECT CENTERS;
DEFECT COMPLEXES;
INTERSTITIALS;
SELF DIFFUSION;
DEFECT COMPLEX;
HYPERFINE INTERACTIONS;
INITIO METHODS;
INTRINSIC DEFECTS;
INTRINSIC POINT DEFECTS;
SELF-DIFFUSION;
VIBRATIONAL MODES;
SILICON CARBIDE;
POINT DEFECTS;
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EID: 0001499010
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.471 Document Type: Article |
Times cited : (30)
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References (19)
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