Self diffusion in SiC: the role of intrinsic point defects

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 323-326

  Mattausch, Alexander ^a   Bockstedte, Michel ^a   Pankratov, Oleg ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL STRUCTURE; DIFFUSION IN SOLIDS; FERMI LEVEL; NUMERICAL ANALYSIS; POINT DEFECTS; POTENTIAL ENERGY; STOICHIOMETRY; THERMODYNAMIC PROPERTIES;

ABINITIO DEFECT ENERGETICS; INTRINSIC INTERSTITIALS; RELEVANT TRANSIENT COMPLEXES; SELF DIFFUSION;

SILICON CARBIDE;

EID: 14344274586     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.323     Document Type: Article

References (11)

1. M. Laube, G. Pensl, and H. Itoh, Appl. Phys. Lett. 74 (1999), p. 2292.
2. M. S. Jansson et al., Appl. Phys. Lett. 76 (2000), p. 1434.
3. J. D. Hong, R. F. Davis, and D. E. Newbury, J. Mater. Sci. 16 (1981), p. 2485.
4. M. Bockstedte and O. Pankratov, Mater. Sci. Forum 338-342 (2000), p. 949.
5. M. Bockstedte et al., Comput. Phys. Commun. 107 (1997), p. 187.
6. J. P. Perdew and A. Zunger, Phys. Rev. B 23 (1981), p. 5048; D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45 (1980), p. 567.
7. J. P. Perdew and A. Zunger, Phys. Rev. B 23 (1981), p. 5048; D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45 (1980), p. 567.
8. M. Fuchs and M. Scheffler, Comp. Phys. Commun. 119 (1999), p. 67.
9. G. Makov and M. C. Payne, Phys. Rev. B, 51 (1995), p. 4041.
10. M. Bockstedte and M. Scheffler, Z. Phys. Chem. 200 (1997), p. 195.
11. I. V. Ionova and E. A. Carter, J. Chem. Phys, 98 (1993), p. 6377. Implementation: E. Pehlke, private communication.