Suppressed diffusion of implanted boron in 4H-SiC

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2292-2294

  Laube, Michael ^a   Pensl, Gerhard ^a   Itoh, Hisayoshi ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CATALYSTS; ION IMPLANTATION; SILICON CARBIDE; THERMAL DIFFUSION IN SOLIDS;

TRANSIENT-ENHANCED DIFFUSION;

SEMICONDUCTING BORON;

EID: 0032621364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123828     Document Type: Article

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