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Volumn 13, Issue 28, 2001, Pages 6203-6231

Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; ELECTROSTATICS; IONIZATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035898250     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/13/28/305     Document Type: Article
Times cited : (166)

References (60)
  • 7
    • 4243659490 scopus 로고    scopus 로고
    • Bound excitons in silicon carbide
    • Dissertation No 588 (Sweden: Linköping University)
    • (1999)
    • Egilsson, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.