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Volumn 13, Issue 28, 2001, Pages 6203-6231
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Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL DEFECTS;
ELECTRONIC DENSITY OF STATES;
ELECTRONIC STRUCTURE;
ELECTROSTATICS;
IONIZATION;
PROBABILITY DENSITY FUNCTION;
SEMICONDUCTING SILICON COMPOUNDS;
ANTISITE DEFECTS;
ATOMIC STRUCTURE;
CARBON VACANCY;
ELECTRON CHEMICAL POTENTIAL;
ELECTROSTATIC INTERACTION;
IONIZATION LEVELS;
LOCAL SPIN DENSITY APPROXIMATION;
MONOVACANCIES DEFECTS;
PSEUDOPOTENTIAL METHOD;
SILICON CARBIDE;
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EID: 0035898250
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/13/28/305 Document Type: Article |
Times cited : (166)
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References (60)
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