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Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 20, 2001, Pages 2012011-2012014

Carbon vacancy-related defect in 4H and 6H SiC

(3) Son, N T a Hai, P N a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; SILICON;

ARTICLE; ELECTRON; ELECTRON SPIN RESONANCE; HIGH TEMPERATURE PROCEDURES; MAGNETIC FIELD; MATHEMATICAL PARAMETERS; SEMICONDUCTOR;

EID: 0034888268 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/physrevb.63.201201 Document Type: Article

Times cited : (122)

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