Present and future of high-speed compound semiconductor IC's

International Journal of High Speed Electronics and Systems

Volumn 13, Issue 1, 2003, Pages 1-25

  Otsuji, Taiichi ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Compound semiconductor; HBT; HEMT; IC; Lightwave communication

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; TIME DIVISION MULTIPLEXING; TRANSCEIVERS; WAVELENGTH DIVISION MULTIPLEXING;

COMPOUND SEMICONDUCTORS; LIGHTWAVE COMMUNICATIONS;

INTEGRATED CIRCUITS;

EID: 0242584659     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156403001508     Document Type: Article

References (77)

1. K. Fukuchi, K. Kasamatsu, M. Morie, R. Ohhira, T. Ito, K. Sekiya, D. Ogawahara and T. Ono, "10.92-Tb/s (273 × 40-Gb/s) triple-band/ultra-dense WDM optical-repeated transmission experiment," in Tech. Dig. Opt. Fiber Comm. Conf., 2001, PD24-1-4.
2. S. Bigo, Y. Fregnac, G. Chorlet, S. Borne, P. Tran, C. Simonneou, D. Bayart, A. Joudan, J.-P. Hamaide, W. Idler, R. Dischler, G. Veith, H. Gross and W. Poehlmannk, "10.2 Tbit/s (256 × 42.7 Gbit/s PDM/WDM) transmission over 100 km TelaLight fiber with 1.28 bit/s/Hz spectral efficiency," in Tech. Dig. Opt. Fiber Comm. Conf., 2001, PD25-1-4.
3. M. Rodwell ed., Selected Topics in Electronics and Systems Vol. 21, High Speed Integrated Circuit Technology, Towards 100 GHz Logic, World Scientific Publishing, Singapore, 2001.
4. max," in Postdeadline Paper IEEE Dev. Res. Conf., 1999.
5. K. Shinohara, Y. Yamashita, A. Endoh, K. Hikosaka, T. Matsui, T. Mimura and S. Hiyamizu, "Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472 GHz cutoff frequency," Jap. J. Appl. Phys. Part 2-Lett. 41 (2002) L437-L439.
6. T. Suzuki, Y. Nakasha, T. Takahashi, K. Makiyama, K. Imanishi, T. Hirose and Y. Watanabe, "A 90-Gb/s 2:1 multiplexer IC in InP-based HEMT technology," in Dig. Tech. Papers IEEE Int. Solid-State Circuits Conf., 2002, 11.7.
7. M. Sokolich, C. Fields, B. Shi, Y.K. Brown, M. Montes, R. Martinez, A.R. Kramer S. Thomas III and M. Madhav, "A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology," in Tech. Dig. IEEE GaAs IC Sym., 2000, pp. E.11.
8. E. Sano, Y. Matsuoka and T. Ishibashi, "Device figure-of-merit for high-speed digital ICs and baseband amplifiers," IEICE Trans. Electron. E78-C (1995) 1182-1188.
9. Keh-Chung Wang ed., Selected Topics in Electronics and Systems Vol. 13, High-Speed Circuits for Lightwave Communications, World Scientific Publishing, Singapore, 1999.
10. T in a manufacturable technology," IEEE Electron Dev. Lett. 23 (2002) 258-260.
11. K. Washio, R. Hayami, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto and M. Kondo, "67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBT," IEEE Trans. Microwave Theory and Tech. 49 (2001) 3-8.
12. K. Washio, "Self-aligned Si BJT/SiGe HBT technology and its application to high-speed circuits," Int. J. High Speed Electron. and Sys. 11 (2001) 77-114.
13. H.-M. Rein, "Si and SiGe bipolar ICs for 10 to 40 Gb/s optical-fiber TDM links," Int. J. High Speed Electron. and Sys. 9 (1998) 347-383.
14. S. Subbanna, J. Johnson, G. Freeman, R. Volant, R. Groves, D. Herman and B. Meyerson, "Prospects of silicon-germanium-based technology for very high-speed circuits," in Dig. IEEE MTT-S Int. Microwave Symp. Vol. 1, 2000, pp. 361-364.
15. K. Nishimura, K. Onodera, S. Aoyama, M. Tokumitsu and K. Yamasaki, "High performance 0.1 μm self-aligned-gate GaAs MESFET technology, " in Proc. European Solid-State Device Res. Conf. (ESSDERC) '96, 1996, pp. 865-868.
16. T. Otsuji, K. Murata, K. Narahara, K. Sano and E. Sano, "20-40-Gbit/s-class GaAs MESFET digital ICs for future optical fiber communications systems," Int. J. High Speed Electron. and Sys. 9 (1998) 399-435.
17. M. Tokumitsu, M. Hirano, T. Otsuji, S. Yamaguchi and K. Yamasaki, "A 0.1-μm self-aligned-gate GaAs MESFET with multilayer interconnection structure for ultra-high-speed ICs," in Tech. Dig. Int. Electron Device Meeting (IEDM), 1996, pp. 211-214.
18. Y. Kuriyama, T. Sugiyama, S. Hongo, J. Akagi, K. Tsuda, N. Iizuka and M. Obara, "A 40GHz D-type flip-flop using AlGaAs/GaAs HBT's," in Tech. Dig. IEEE GaAs IC Symp., 1994, pp. 189-192.
19. T. Ishibashi and Y. Yamauchi, "A novel AlGaAs/GaAs HBT structure for near-ballistic collection," in Dig. 45th Annual Device Res. Conf., 1987, p. IVA-6.
20. T. Ishibashi, Y. Yamauchi, E. Sano, H Nakajima and Y. Matsuoka, "Balistic collection transistors and their applications," Int. J. High Speed Electron. and Sys. 5 (1994) 349-379.
21. K. Runge, P.J. Zampardi, R.L. Pierson, R. Yu, P.B. Thomas, S.M. Beccue and K.C. Wang, "AlGaAs/GaAs HBT circuits for optical TDM communications," Int. J. High Speed Electron. and Sys. 9 (1998) 473-503.
22. R. Ohhira, Y. Amamiya, T. Niwa, N. Nagano, T. Takeuchi, C. Kurioka, T. Chuzenji and K. Fukuchi, "AlGaAs/InGaAs HBT IC modules for 40-Gb/s optical receiver," IEICE Trans. Electron. E82-C (1999) 448-455.
23. H. Kroemer, "Heterostructure bipolar-transistors - what should we build," J. Vacuum Science and Tech. B 1 (1983) 126-130.
24. T.S. Low, C.P. Hutchinson, P.C. Canfield, T.S. Shirley, R.E. Yeats, J.S.C. Chang, G.K. Essilfie, M.K. Culver, W.C. Whiteley, D.C. D'Avanzo, N. Pan, J. Elliot and C. Lutz, "Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability," in Tech. Dig. IEEE GaAs IC Symp., 1998, pp. 153-156.
25. K. Mochizuki, T. Oka, K. Ouchi and T. Tanoue, "Reliability investigation of heavily C-doped InGaP/GaAs HBTs operated under a very high current-density condition," Solid-State Electron. 43 (1999) 1425-1428.
26. T. Oka, K. Hirata, H. Suzuki, K. Ouchi, H. Uchiyama, T. Taniguchi, K. Mochizuki and T. Nakamura, "High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits," IEEE Trans. Electron Devices 48 (2001) 2625-2630.
27. K. Uchida, H. Matsuura, T. Yakihara, S. Kobayashi, S. Oka, T. Fujita and A. Miura, "A series of InGaP/InGaAs HBT oscillators up to D-band," IEEE Trans. Microwave Theory and Tech. 49 (2001) 858-865.
28. 1-xAs heterojunctions," Jpn. J. Appl. Phys. 19 (1980) L225-L227.
29. M. Schlechtweg, W.H. Haydl, A. Bangert, J. Braustein, P.J. Tasker, L. Verweyer, H. Massler, W. Bronner, A. Hulsmann and K. Kohler, "Coplanar millimeter-wave IC's for W-band applications using 0.15 μm pseudomorphic MODFET's," IEEE J. Solid State Circuits 31 (1996) 1426-1434.
30. Z. Lao, M. Lang, V. Hurm, Z. Wang, A. Thiede, M. Schlechtweg, W. Bronner, G. Kaufel, K. Kohler, A. Hulsmann, B. Raynor and T. Jakobus, "20-40-Gbit/ s GaAs-HEMT chip set for optical data receiver," Int. J. High Speed Electron. and Sys. 9 (1998) 437-472.
31. Z. Lao, A. Thiede, U. Nowotny, H. Lienhart, V. Hurm, M. Schlechtweg, J. Hornung, W. Bronner, K. Kohler, A. Hulsmann, B. Raynor and T. Jakobus, "40-Gb/s high-power modulator driver IC for lightwave communication systems," IEEE J. Solid State Circuits 33 (1998) 1520-1526.
32. 3 modulator driver circuit," in Tech. Dig. IEEE GaAs IC Symp., 2001, pp. 137-140.
33. max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter," in Tech. Dig. IEEE GaAs IC Symp., 1995, pp. 163-166.
34. S. Yamahata, H. Nakajima, M. Ida, H. Niiyama, N. Watanabe, E. Sano and Y. Ishii, "Reliable carbon-doped InP/InGaAs HBT's technology for low-power 40-GHz static frequency divider," in Proc. Int. Conf. Solid State Devices and Materials, 1999, 570-571.
35. E. Sano, H. Nakajima, N. Watanabe and S. Yamahata, "40 Gbit/s decision IC using InP/InGaAs composite-collector heterojunction bipolar transistors," IEE Electron. Left 35 (1999) 1194-1195.
36. E. Sano, H. Nakajima, N. Watanabe, S. Yamahata and Y. Ishii, "40 Gbit/s 1:4 demultiplexer IC using InP-based heterojunction bipolar transistors," IEE Electron. Lett. 35 (1999) 2116-2117.
37. M.J.W. Rodwell, Miguel Urteaga, D. Mensa, Q. Lee, J. Guthrie, Y. Betser, S.C. Martin, R.P. Smith, S. Jaganathan, T. Mathew, P. Krishnan, S. Long, R. Pullela, B. Agarwal, U. Bhattacharya, L. Samoska, Denis Scott and Mattias Dahlstrom, "Submicron Scaling of HBTs." IEEE Trans. Electron Devices 48 (2001) 2606-2624.
38. T. Mathew, H.J. Kim, S. Jaganathan, D. Scott, S. Krishnan, Y. Wei, M. Urteaga, M.J.W. Rodwell and S. Long, "75 GHz ECL Static Frequency Divider Using InAIAs/InGaAs HBTs." IEE Electron. Lett. 37 (2001) 667-668.
39. C.H. Fields, M. Sokolich, S. Thomas, K. Elliot and J. Jensen, "Progress toward 100 GHz logic in InP HBT IC Technology," Int. J. High Speed Electron. and Sys. 11 (2001) 217-243.
40. J.P. Mattia, R. Pullela, G. Georgieu, Y. Baeyens, H.S. Tsai, Y.K. Chen, C. Dorschky, T. Winkler Von Mohrenfels, M. Reinhold, C. Groepper, M. Sokolich, L. Ngyuen and W. Stanchina, "High-speed multiplexers: a 50Gb/s 4:1 MUX in InP HBT technology," in Tech. Dig. IEEE GaAs IC Symp., 1999, pp. 189-192.
41. J. Godin, P. Andre, J.L. Benchimol, P. Berdaguer, S. Blayac, J.R. Burie, P. Desrousseaux, A.M. Duchenois, N. Kauffmann, A. Konczykowska and M. Riet, "40 Gbits optical communications: InP DHBT technology, ciucuits and system experiments," in Tech. Dig. IEEE GaAs IC Symp., 1999, pp. 185-188.
42. A. Kasbari, Ph. Andre, J. Godin and A. Konczykowska, "40 Gbit/s master-slave D-type flip-flop in InP DHBT technology," IEE Electron. Lett. 38 (2002) 330-331.
43. M. Dahlströml, M. Urteaga, S. Krishnan, N. Parthasarathy and M.J.W. Rodwell, "Ultra-Wideband DHBTs using a Graded Carbon-Doped InGaAs Base," in Post-deadline Papers Indium Phosphide and Related Materials Conf. (IPRM), 2002.
44. L.D. Nguyen, L.E. Larson and U.K. Mishra, "Ultra-high-speed modulation-doped field-effect transistors: a tutorial review," Proc. IEEE 80 (1992) 494-518.
45. T. Enoki, H. Ito, K. Ikuta, Y. Umeda and Y. Ishii, "0.1-μm InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD," Microwave and Optical Tech. Lett. 11 (1996) 135-139.
46. T. Suemitsu, T. Ishii and Y. Ishii, "Gate and recess engineering for ultrahigh-speed InP-based HEMTs," in Dig. Topical Workshop on Heterostructure Microelectronics, 2000, 2-3.
47. Y. Yamashita, A. Endoh, K. Shinohara, M. Higashiwaki, K. Hikosaka, T. Mimura, S. Hiyamizu and T. Matsui, "Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency," IEEE Electron Dev. Lett. 22 (2001) 367-369.
48. T. Otsuji, K. Murata, T. Enoki and Y. Umeda, "An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs" IEEE J. Solid-State Circuits 33 (1998) 1321-1327.
49. S. Kimura, Y. Imai, Y. Umeda and T. Enoki, "0-90 GHz InAlAs/InGaAs/InP HEMT distributed amplifier IC, IEE Electron. Lett. 31 (1995) 1430-1431.
50. K. Murata, T. Otsuji, E. Sano, S. Kimura and Y. Yamane, "70-Gbit/s multiplexer and 50-Gbit/s decision IC modules using InAlAs/InGaAs/InP HEMTs," IEICE Trans. Electron. E83-C (2000) 1166-1169.
51. K. Sano, K. Murata and Y. Yamane, "50-Gbit/s demultiplexer IC module using InAlAs/InGaAs/InP HEMTs," IEICE Trans. Electron. E83-C (2000) 1786-1788.
52. K. Murata, K. Sano, E. Sano, S. Sugitani and T. Enoki, "Fully monolithic integrated 43 Gbit/s clock and data recovery circuit in InPHEMT technology," IEE Electron. Lett. 37 (2001) 1235-1237.
53. T. Suzuki, Y. Nakasha, T. Takahashi, K. Makiyama, K. Imanishi, T. Hirose and Y. Watanabe, "A 90Gb/s 2:1 multiplexer IC in InP-based HEMT technology," in Dig. Tech. Papers IEEE Int. Solid-State Circuits Conf. (ISSCC), 2002, 11.7.
54. Y. Nakasha, T. Suzuki, H. Kano, A. Ohya, K. Sawada, K. Makiyama, T. Takahashi, M. Nishi, T. Hirose and Y. Watanabe, "A 43Gb/s full-rate-clock 4:1 multiplexer in InP-based HEMT technology," in Dig. Tech. Papers IEEE Int. Solid-State Circuits Conf. (ISSCC), 2002, 11.6.
55. E. Sano, K. Sano, T. Otsuji, K. Kurishima and S. Yamahata, "Ultra-high speed low-power monolithic photoreceiver using InP/InGaAs double-heterojunction bipolar transistors," IEE Electron. Lett. 33 (1997) 1047-1048.
56. V. Hurm, W. Benz, W. Bronner, A. Hulsmann, T. Jakobus, K. Kohler, A. Leven, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg and A. Thiede, "40 Gbit/s 1.55 μm pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate," IEE Electron. Lett. 34 (1998) 2060-2062.
57. D. Huber, M. Bitter, T. Morf, C. Bergamashi, H. Melchior and H. Jackel, "46 GHz bandwidth monolithic InP/InGaAs pin/SHBT photoreceiver," IEE Electron. Lett. 35 (1999) 40-41.
58. K. Takahata, Y. Muramoto, H. Fukano, K. Kato, A. Kozen, S. Kimura, Y. Imai, Y. Miyamoto, O. Nakajima and Y. Matsuoka, "Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier," IEEE J. Selected Topics in Quantum Electron. 6 (2000) 31-37.
59. T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma and T. Furuta, "Uni-traveling-carrier photodiodes," in Tech. Dig. OSA Int. Topical Meeting on Ultrafast Electron. and Optoelectron., 1997, pp. 166-168.
60. K. Murata, H. Kitabayashi, S. Shimizu, S. Kimura, T. Furuta, N. Watanabe and E. Sano, "A 40-Gbit/s monolithic digital OEIC module composed of uni-traveling-carrier photodiode and InP HEMT decision circuit," in Dig. IEEE MTT-S Int. Microwave Sym., 2000, pp. 345-348.
61. T. Otsuji, M. Yoneyama, K. Murata and E. Sano, "A super-dynamic flip-flop circuit for broadband applications up to 24 Gb/s utilizing production-level GaAs MESFETs," IEEE J. Solid State Circuits 32 (1997) 1357-1362.
62. K. Murata, T. Otsuji, M. Yoneyama and M. Tokumitsu, "A 40-Gbit/s super-dynamic decision IC fabricated with 0.15-μm GaAs MESFETs," IEEE J. Solid-State Circuits 33 (1998) 1527-1535.
63. K. Murata, T. Otsuji, E. Sano, S. Kimura and Y. Yamane, "70-Gbit/s multiplexer and 50-Gbit/s decision IC modules using InAlAs/InGaAs/InP HEMTs," IEICE Trans. Electron. E83-C (2000) 1166-1169.
64. K. Murata, T. Otsuji, M. Ohhata, M. Togashi, E. Sano and M. Suzuki, "A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19 Gb/s decision circuit using 0.2 μm GaAs MESFET," IEEE J. Solid State Circuit 30 (1995) 1101-1108.
65. K. Ishii, H. Ichino, M. Togashi, Y. Kobayashi and C. Yamaguchi, "Very-high-speed Si bipolar static frequency-divier with new T-type flip-flops," IEEE J. Solid-State Circuits 30 (1995) 19-24.
66. B. Tang, J. Northoff, A. Gutierres-Aitken, E. Kaneshiro and P. Chin, "InP DHBT 68 GHz frequency divider," in Tech. Dig. IEEE GaAs IC Symp., 1999, pp. 193-196.
67. T. Suzuki, H. Kano, Y. Nakasha, T. Takahashi, K. Imanishi, H. Ohnishi and Y. Watanabe, "40-Gbit/s D-type flip-flop and multiplexer circuits using InP HEMT," in Dig. IEEE MTT-S Int. Microwave Symp., 2001, pp. TUIF-50-1-4.
68. M. Sokolich, G. Raghavan, D.A. Hitko and Y. Brown, "InP HBT Production Technology for 100 Gbps Lightwave Communications," in GaAs ManTech Digest of Papers, Vol. '99, 1999, pp. 169-172.
69. T. Enoki, H. Yokoyama, Y. Umeda and T. Orsuji, "Ultrahigh-speed integrated sircuits using InP-based HEMTs," Jpn. J. Appl. phys. 37 (1998) 1359-1346.
70. 0.65 Schottky layers grown by MOVPE, in Dig. 56th Annual Dev. Res. Conf., 1998, pp. 32-33.
71. C.R. Bolognesi, M. Matine, M.W. Dvorak, P. Yeo, X.G. Xu and S.P. Watkins, "InP/GaAsSb/InP Double HBTs: a new alternative for InP-based DHBTs," IEEE Trans. Electron Devices 48 (2001) pp. 2631-2639.
72. C. Marrian, "DARPA Antimonide Based Compound Semiconductors Program," in Third Workshop on the Fabrication, Characterization, and Applications of 6.1 Å III-V Semiconductors, 2001.
73. K. Maezawa and T. Mizutani, "A new resonant tunneling logic gate employing monostable-bistable transition," Jap. J. Appl. Phys. 37 (1993) 1359-1364.
74. K. Sano, K. Murata, T. Otsuji, T. Akeyoshi, N. Shimizu, M. Yamamoto, T. Ishibashi and E. Sano, "Ultra-fast optoelectronic decision circuit using resonant tunneling diodes and a uni-traveling-carrier photodiode," IEICE Trans. Electron. E82-C (1999) 1638-1646.
75. K. Sano, K. Murata, T. Otsuji, T. Akeyoshi, M. Shimizu and E. Sano, "An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneking diodes and uni-traveling-carrier photodiode," IEEE J. Solid State Circuits 36 (2001) 281-289.
76. K. Murata, K. Sano, T. Akeyoshi, N. Shimizu, E. Sano, M. Yamamoto and T. Ishibashi, "An optoelectronic clock recovery circuit using a resonant tunneling diode and a uni-traveling-carrier photodiode," IEICE Trans. Electron. E82-C (1999) 1494-1501.
77. K. Narahara, T. Otsuji, N. Shimizu and E. Sano, "An optically-controlled phase shifter for traveling-wave retiming circuit," OSA Trends in Optics and Photonics Vol. 28, Ultrafast Electronics and Optoelectronics, J.E. Bowers and W.H. Knox, eds., Optical Society of America, Washington, DC 1999, pp. 211-218.