40 Gbit/s 1:4 demultiplexer IC using InP-based heterojunction bipolar transistors

Electronics Letters

Volumn 35, Issue 24, 1999, Pages 2116-2117

  Sano, E ^a   Nakajima, H ^b   Watanabe, N ^b   Yamahata, S ^b   Ishii, Y ^b  

^a NTT Network Innovation Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

DEMULTIPLEXERS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0033221273     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991408     Document Type: Article

References (5)

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2. YONEYAMA, M., SANO, A., HAGIMOTO, K., OTSUJI, T., MURATA, K., IMAI, Y., YAMAGUCHI, S., ENOKI, T., and SANO, E.: 'Optical repeater circuit design based on InAlAs/InGaAs HEMT digital IC technology', IEEE Trans. Microw. Theory Tech., 1997, 45, pp. 2274-2282
3. LANG, M., WANG, Z.G., THIEDE, A., LIENHART, H., JAKOBUS, T., BRONNER, W., HORNUNG, J., and HULSMANN, A.: 'A complete GaAs HEMT single chip data receiver for 40Gbit/s data rates'. GaAs IC Symp. Tech. Dig., November 1998, pp. 55-58
4. RUNGE, K., PIERSON, R.L., ZAMPARDI, P.J., THOMAS, P.B., YU, J., and WANG, K.C.: '30Gbit/s 1:4 demultiplexer IC using AlGaAs/GaAs HBTs', Electron. Lett., 1997, 33, pp. 765-766
5. YAMAHATA, S., NAKALIMA, H., IDA, M., NIIYAMA, H., WATANABE, N.. SANO, E., and ISHII, Y.: 'Reliable carbon-doped InP/InGaAs HBTs technology for low-power 40-GHz static frequency divider'. 1999 Int. Conf. Solid State Devices and Materials, September 1999, pp. 570-571