Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472 GHz cutoff frequency

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 4, 2002, Pages

  Shinohara, Keisuke ^a,c   Yamashita, Yoshimi ^a   Endoh, Akira ^a   Hikosaka, Kohki ^a   Matsui, Toshiaki ^c   Mimura, Takashi ^a   Hiyamizu, Satoshi ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Cutoff frequency; Gate length; Gate recess; HEMT; InGaAs InAlAs; InP; Lattice matched

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; LATTICE CONSTANTS; LOGIC GATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON VELOCITY; EPITAXIAL STRUCTURE; INDIUM ALUMINUM ARSENIDE; MESA STRUCTURE; WET CHEMICAL ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037089133     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l437     Document Type: Letter

References (7)