46GHz bandwidth monolithic InP/InGaAs pin/SHBT photoreceiver

Electronics Letters

Volumn 35, Issue 1, 1999, Pages 40-41

  Huber, D ^a   Bitter, M ^a   Morf, T ^a   Bergamaschi, C ^b   Melchior, H ^a   Jackel H ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF APPLIED SCIENCES AND ARTS NORTHWESTERN SWITZERLAND   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTORECEIVERS;

BANDWIDTH; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

PHOTODETECTORS;

EID: 0033530987     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990053     Document Type: Article

References (6)

1. HUBER, D., et al.: '23GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12THzΩ gain-bandwidth product'. Proc. 10th Conf. Indium Phosphide and Related Materials, May 1998, pp. 447-450
2. BAUKNECHT, R.: 'InP double heterojunction bipolar transistors for driver circuits in fiber optical communication systems'. Dissertation ETH Nr. 12455, December 1997
3. VANISRI, T., et al.: 'Integrated high frequency low noise current-mode optical transimpedance preamplifiers', IEEE J. Solid State Circuits, 1995, SC-30, (6), pp. 677-685
4. SANO, E., et al.: 'Ultra-high speed, low power monolithic photoreceiver using InP/inGaAs double-heterojunction bipolar transistors', Electron. Lett., 1997, 33, (12), pp. 1047-1048
5. MURAMOTO, Y., et al.: '46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide PIN photodiode and a distributed amplifier'. Proc. 23rd European Conf. Optical Communication, September 1997, pp. 37-40
6. HURM, V., et al.: '40Gb/s 1.55μm pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate', Electron. Lett., 1998, 34, (21), pp. 2060-2062