Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs doubleheterojunction bipolar transistors

Electronics Letters

Volumn 33, Issue 12, 1997, Pages 1047-1048

  Sano, E ^a   Sano, K ^a   Otsuji, T ^a   Kurishima, K ^a   Yamahata, S ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Integrated optoelectronics; Optical receivers

Indexed keywords

ENERGY DISSIPATION; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; PHOTODETECTORS; SEMICONDUCTING INDIUM PHOSPHIDE;

MONOLITHIC PHOTORECEIVERS;

INTEGRATED OPTOELECTRONICS;

EID: 0031554316     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970672     Document Type: Article

References (9)

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