-
1
-
-
0030379325
-
40-Gbit/s IC's for future lightwave communications systems
-
T. Otsuji, E. Sano, Y. Imai, and T. Enoki, "40-Gbit/s IC's for future lightwave communications systems," in Tech. Dig. IEEE GaAs IC Symp., 1996, pp. 14-17.
-
(1996)
Tech. Dig. IEEE GaAs IC Symp.
, pp. 14-17
-
-
Otsuji, T.1
Sano, E.2
Imai, Y.3
Enoki, T.4
-
2
-
-
0030405060
-
40 Gb/s, 3 Volt InP HBT IC's for a fiber optic demonstrator system
-
T. Swahn, T. Lewin, M. Mokhtari, H. Tenhunen, R. Walden, and W. E. Stanchina, "40 Gb/s, 3 Volt InP HBT IC's for a fiber optic demonstrator system," in Tech. Dig. IEEE GaAs IC Symp., 1996, pp. 15-128.
-
(1996)
Tech. Dig. IEEE GaAs IC Symp.
, pp. 15-128
-
-
Swahn, T.1
Lewin, T.2
Mokhtari, M.3
Tenhunen, H.4
Walden, R.5
Stanchina, W.E.6
-
3
-
-
3142514922
-
Si-bipolar - A potential candidate for high-speed electronics in 20 and 40 Gb/s TDM systems?
-
H.-M. Rein, E. Gottwald, and T. F. Meister, "Si-bipolar - A potential candidate for high-speed electronics in 20 and 40 Gb/s TDM systems?" in Tech. Dig. Ultrafast Electron. Optoelectron., 1997, pp. 118-120.
-
(1997)
Tech. Dig. Ultrafast Electron. Optoelectron.
, pp. 118-120
-
-
Rein, H.-M.1
Gottwald, E.2
Meister, T.F.3
-
4
-
-
0031364713
-
High speed AlGaAs/GaAs HBT circuits for up to 40 Gb/s optical communication
-
K. Runge, P. J. Zampardi, R. L. Pierson, P. B. Thomas, S. M. Beccue, R. Yu, and K. C. Wang, "High speed AlGaAs/GaAs HBT circuits for up to 40 Gb/s optical communication," in Tech. Dig. IEEE GaAs IC Symp., 1997, pp. 211-214.
-
(1997)
Tech. Dig. IEEE GaAs IC Symp.
, pp. 211-214
-
-
Runge, K.1
Zampardi, P.J.2
Pierson, R.L.3
Thomas, P.B.4
Beccue, S.M.5
Yu, R.6
Wang, K.C.7
-
5
-
-
0031382437
-
InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems
-
H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, and R. Takeyari, "InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems," in Tech. Dig. IEEE GaAs IC Symp., 1997, pp. 215-218.
-
(1997)
Tech. Dig. IEEE GaAs IC Symp.
, pp. 215-218
-
-
Suzuki, H.1
Watanabe, K.2
Ishikawa, K.3
Masuda, H.4
Ouchi, K.5
Tanoue, T.6
Takeyari, R.7
-
6
-
-
0031121765
-
60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique
-
M. Möller, H.-M. Rein, A. Felder, and T. F. Meister, "60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique," IEE Electron. Lett., vol. 33, no. 8, pp. 679-680, 1997.
-
(1997)
IEE Electron. Lett.
, vol.33
, Issue.8
, pp. 679-680
-
-
Möller, M.1
Rein, H.-M.2
Felder, A.3
Meister, T.F.4
-
7
-
-
0030715850
-
A 40-Gbit/s super-dynamic decision IC using 0.15-/im GaAs MESFET's
-
K. Murata, T. Otsuji, M. Yoneyama, and M. Tokumitsu, "A 40-Gbit/s super-dynamic decision IC using 0.15-/im GaAs MESFET's," in Tech. Dig. IEEE MTT-S Int. Microwave Symp., 1997, pp. 465-468.
-
(1997)
Tech. Dig. IEEE MTT-S Int. Microwave Symp.
, pp. 465-468
-
-
Murata, K.1
Otsuji, T.2
Yoneyama, M.3
Tokumitsu, M.4
-
8
-
-
3242859377
-
44 Gbit/s GaAs MESFET selector IC
-
K. Sano, K. Murata, and K. Nishimura, "44 Gbit/s GaAs MESFET selector IC," IEE Electron. Lett., vol. 33, no. 16, pp. 1377-1378, 1997.
-
(1997)
IEE Electron. Lett.
, vol.33
, Issue.16
, pp. 1377-1378
-
-
Sano, K.1
Murata, K.2
Nishimura, K.3
-
9
-
-
0031098483
-
45 Gbit/s AlGaAs/GaAs HEMT multiplexer IC
-
Z. Lao, U. Nowotny, A. Thiede, V. Hurm, G. Kaufel, M. Rieger-Motzer, W. Bronner, J. seibel, and A. Hülsmann, "45 Gbit/s AlGaAs/GaAs HEMT multiplexer IC," IEE Electron. Lett., vol. 33, no. 7, pp. 589-590, 1997.
-
(1997)
IEE Electron. Lett.
, vol.33
, Issue.7
, pp. 589-590
-
-
Lao, Z.1
Nowotny, U.2
Thiede, A.3
Hurm, V.4
Kaufel, G.5
Rieger-Motzer, M.6
Bronner, W.7
Seibel, J.8
Hülsmann, A.9
-
10
-
-
0031200699
-
A 64-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMT's
-
T. Otsuji, M. Yoneyama, Y. Imai, T. Enoki, and Y. Umeda, "A 64-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMT's," IEE Electron. Lett., vol. 33, no. 17, pp. 1488-1489, 1997.
-
(1997)
IEE Electron. Lett.
, vol.33
, Issue.17
, pp. 1488-1489
-
-
Otsuji, T.1
Yoneyama, M.2
Imai, Y.3
Enoki, T.4
Umeda, Y.5
-
11
-
-
0030704535
-
Limitations and challenges, of single-carrier full 40-Gbit/s repeater system based on optical equalization and new circuit design
-
K. Hagimoto. M. Yoneyama, A. Sano, A. Hirano, T. Kataoka, T. Otsuji, K. Sato, and K. Noguchi, "Limitations and challenges, of single-carrier full 40-Gbit/s repeater system based on optical equalization and new circuit design," in Tech. Dig. OFC '97, 1997, pp. 242-243.
-
(1997)
Tech. Dig. OFC '97
, pp. 242-243
-
-
Hagimoto, K.1
Yoneyama, M.2
Sano, A.3
Hirano, A.4
Kataoka, T.5
Otsuji, T.6
Sato, K.7
Noguchi, K.8
-
12
-
-
0030689164
-
40-Gbit/s optical repeater circuits using InAIAs/InGaAs HEMT digital IC chip set
-
M. Yoneyama, A. Sano, K. Hagimoto, T. Otsuji, K. Murata, Y. Imai, S. Yamaguchi, T. Enoki, and E. Sano, "40-Gbit/s optical repeater circuits using InAIAs/InGaAs HEMT digital IC chip set," in Tech. Dig. IEEE MTT-S Int. Microwave Symp., 1997, pp. 461-164.
-
(1997)
Tech. Dig. IEEE MTT-S Int. Microwave Symp.
, pp. 461-1164
-
-
Yoneyama, M.1
Sano, A.2
Hagimoto, K.3
Otsuji, T.4
Murata, K.5
Imai, Y.6
Yamaguchi, S.7
Enoki, T.8
Sano, E.9
-
13
-
-
0029217064
-
0.1 μm InAlAs/InGaAs HEMT with an InP-recess-etch stopper grown by MOCVD
-
Hokkaido, Japan
-
T. Enoki, H. Ito, K. Ikuta, and Y. Ishii, "0.1 μm InAlAs/InGaAs HEMT with an InP-recess-etch stopper grown by MOCVD," in Int. Conf. Indium Phosphide and Related Materials Conf. Proc., Hokkaido, Japan, 1995, pp. 81-88.
-
(1995)
Int. Conf. Indium Phosphide and Related Materials Conf. Proc.
, pp. 81-88
-
-
Enoki, T.1
Ito, H.2
Ikuta, K.3
Ishii, Y.4
-
14
-
-
0029519984
-
Ultra-high-speed InAlAs/InGaAs HEMT IC's using pn-level-shift diodes
-
T. Enoki, Y. Umeda, K. Osafune, H. Ito, and Y. Ishii, "Ultra-high-speed InAlAs/InGaAs HEMT IC's using pn-level-shift diodes," in Tech. Dig. Int. Electron Device Meeting, 1995, pp. 193-196.
-
(1995)
Tech. Dig. Int. Electron Device Meeting
, pp. 193-196
-
-
Enoki, T.1
Umeda, Y.2
Osafune, K.3
Ito, H.4
Ishii, Y.5
-
15
-
-
0005356888
-
SCFL static frequency divider using InAlAs/InGaAs/InP HEMT's
-
Y. Umeda, K. Osafune, T. Enoki, H. Ito, and Y. Ishii, "SCFL static frequency divider using InAlAs/InGaAs/InP HEMT's," in Proc. 1995 European Microwave Conf., 1995, pp. 222-228.
-
(1995)
Proc. 1995 European Microwave Conf.
, pp. 222-228
-
-
Umeda, Y.1
Osafune, K.2
Enoki, T.3
Ito, H.4
Ishii, Y.5
-
16
-
-
0029275983
-
Small-sized MMIC amplifiers using thin dielectric layers
-
Mar.
-
S. Banba and H. Ogawa, "Small-sized MMIC amplifiers using thin dielectric layers," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 485-492, Mar. 1995.
-
(1995)
IEEE Trans. Microwave Theory Tech.
, vol.43
, pp. 485-492
-
-
Banba, S.1
Ogawa, H.2
-
17
-
-
0027222326
-
Capacitive feedback technique for wide-band amplifiers
-
Jan.
-
M. Vadipour, "Capacitive feedback technique for wide-band amplifiers," IEEE J. Solid-State Circuits, vol. 28, pp. 90-92, Jan. 1993.
-
(1993)
IEEE J. Solid-State Circuits
, vol.28
, pp. 90-92
-
-
Vadipour, M.1
-
18
-
-
0031238155
-
A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-μm GaAs MESFET's
-
Nov.
-
T. Otsuji, M. Yoneyama, K. Murata, and E. Sano, "A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-μm GaAs MESFET's," IEEE J. Solid-State Circuits, vol. 32, pp. 1357-1362, Nov. 1997.
-
(1997)
IEEE J. Solid-State Circuits
, vol.32
, pp. 1357-1362
-
-
Otsuji, T.1
Yoneyama, M.2
Murata, K.3
Sano, E.4
-
19
-
-
0031188470
-
40 Gbit/s, fully-integrated 1:2 demultiplexer IC using InAlAs/InGaAs/InP HEMT's
-
T. Otsuji, M. Yoneyama, Y. Imai, T. Enoki, and Y. Umeda, "40 Gbit/s, fully-integrated 1:2 demultiplexer IC using InAlAs/InGaAs/InP HEMT's," IEE Electron. Lett., vol. 33, no. 16, pp. 1409-1410, 1997.
-
(1997)
IEE Electron. Lett.
, vol.33
, Issue.16
, pp. 1409-1410
-
-
Otsuji, T.1
Yoneyama, M.2
Imai, Y.3
Enoki, T.4
Umeda, Y.5
|