High performance 0.1-μm-self-aligned-gate GaAs MESFET Technology

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 865-868

  Nishimura, Kazumi ^a   Onodera, Kiyomitsu ^a   Aoyama, Shinji ^a   Tokumitsu, Masami ^a   Yamasaki, Kimiyoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS MESFET;

EID: 84920720162     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J.J. Uensen et al., "26 GHz GaAs Room-Temperature Dynamic Divider Circuit/∗ IEEEGaAs IC Symp. PP.201-203, 1987.
2. S. Nishi et al., "A36 GHz 1/8 Frequency Divider with GaAs BP-MESFETs." IEEE IEDM Tech. Digest. PP305-308, 1990.
3. Y. Yamane et al., "A 0.2 pm GaAs MESFET Technology For 10 Gb/s Digital and Anal ICs," IEEE MTT-S Digest, pp.513-516, 1991.
4. M. Tokumitsu et al. "A 0.1 GaAs MESFET technology for ultra high speed digital and analog ICs", IEEE MTT-S Digest, pp.1629-1632, 1994.
5. S. S. Miura et al., "Reduction of linewidth variation over reflective topography," SPIE vol.1674 Optical/laser MicroHthography V, pp.147-156, 1992.