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1
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0031384650
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Optical repeater circuit design based on InAlAs/InGaAs HEMT digital 1C technology
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M. Yoneyama, A. Sano, K. Hagimoto, T. Otsuji, K. Murata, Y. Imai, S. Yamaguchi, T. Enoki, and E. Sano, "Optical repeater circuit design based on InAlAs/InGaAs HEMT digital 1C technology," IEEE Trans. Microwave Theory & Tech., vol.45, no.12, pp.2274-2282, 1997.
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Yoneyama, M.1
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2
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85027097802
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Dispersion-compensation-free 400-Gbit/s (10-channel X 40-Gbit/s) transmission experiment using zero-dispersion-flattened transmission line
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K. Yonenaga, A. Matsuura, S. Kuwahara, M. Yoneyama, Y. Miyamoto, Y. Yamabayashi, K. Noguchi, and H. Miyazawa, "Dispersion-compensation-free 400-Gbit/s (10-channel X 40-Gbit/s) transmission experiment using zero-dispersion-flattened transmission line," OECC'98 PD1-3., pp.G-7, 1998.
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OECC'98 PD1-3., Pp.G-7, 1998.
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Yonenaga, K.1
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3
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85027106806
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320-Gbit/s (8 x 40-Gbit/s) WDM field experiment over 281-km installed dispersion-shifted fiber using carrier-suppressed return-to-zero pulse format
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Y. Miyamoto, K. Yonenaga, A. Hirano, A. Sano, S. Kuwahara, H. Kawakami, H. Toba, K. Murata, M. Fukutoku, Y. Yamane, H. Miyazawa, T. Ishibashi, and T. Sato, "320-Gbit/s (8 x 40-Gbit/s) WDM field experiment over 281-km installed dispersion-shifted fiber using carrier-suppressed return-to-zero pulse format," OECC'99 PD1-2., pp.5-8, 1998.
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OECC'99 PD1-2., Pp.5-8, 1998.
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Miyamoto, Y.1
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Ishibashi, T.12
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4
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0033193527
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3.2Tbit/s (80 x 40-Gbit/s) bidirectional WDM/ETDM transmission over 40 km standard single mode fibre
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C. Scheerer, C. Glingener, A. Färbert, J.-P. Elbers, A. Schöpflin, E. Gottwald, and G. Fischer, "3.2Tbit/s (80 x 40-Gbit/s) bidirectional WDM/ETDM transmission over 40 km standard single mode fibre," IEE Electron. Lett., vol.35, no.20, pp.1752-1753, 1999.
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IEE Electron. Lett., Vol.35, No.20, Pp.1752-1753, 1999.
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Scheerer, C.1
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5
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0032646258
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45-Gbit/s decision 1C module using InAlAs/InGaAs/InP HEMTs
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K. Murata, T. Otsuji, and Y. Yamane, "45-Gbit/s decision 1C module using InAlAs/InGaAs/InP HEMTs," IEE Electron. Lett., vol.35, no.16, pp.1379-1380, 1999.
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IEE Electron. Lett., Vol.35, No.16, Pp.1379-1380, 1999.
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Murata, K.1
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6
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0031121765
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GOGbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique
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M.Möller, H.-M. Rein, A. Felder, and T.F. Meister, "GOGbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique," IEE Electron. Lett., vol.33, no.8, pp.679-680, 1997.
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Möller, M.1
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7
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0001477057
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80Gbit/s multiplexer 1C using InAlAs/InGaAs/InP HEMTs
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T. Otsuji, K. Murata, T. Enoki, and Y. Umeda, "80Gbit/s multiplexer 1C using InAlAs/InGaAs/InP HEMTs," IEEE J. Solid-State Circuits, vol.33, no.9, pp.1321-1327, 1998.
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IEEE J. Solid-State Circuits, Vol.33, No.9, Pp.1321-1327, 1998.
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Otsuji, T.1
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8
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0031238155
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A super-dynamic flip-flop circuit for broad-band applications up to 24Gb/s utilizing production-level 0.2-/
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T. Otsuji, M. Yoneyama, K. Murata, and E. Sano, "A super-dynamic flip-flop circuit for broad-band applications up to 24Gb/s utilizing production-level 0.2-/
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IEEE J. Solid-State Circuits, Vol.32, No.9, Pp.1357-1362, 1997.
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Otsuji, T.1
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9
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0029519984
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Ultra-high-speed InAlAs/InGaAs HEMT ICs using pnlevel-shift diodes
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T. Enoki, Y. Umeda, K. Osafune, H. Ito, and Y. Ishii, "Ultra-high-speed InAlAs/InGaAs HEMT ICs using pnlevel-shift diodes," Tech. Digest Int. Electron Device Meet., pp. 193-190, 1995.
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Tech. Digest Int. Electron Device Meet., Pp. 193-190, 1995.
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Enoki, T.1
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10
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0029217064
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0.1 /im InAlAs/InGaAs HEMT with an InP-recess-etch stopper grown by MOCVD
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T. Enoki, H. Ito, K. Ikuta, and Y. Ishii, "0.1 /im InAlAs/InGaAs HEMT with an InP-recess-etch stopper grown by MOCVD," Int. Conf. on Indium Phosphide and Related Materials. Conf. Proc., pp.81-88, Hokkaido, Japan, 1995.
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Int. Conf. on Indium Phosphide and Related Materials. Conf. Proc., Pp.81-88, Hokkaido, Japan, 1995.
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Enoki, T.1
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11
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0029700787
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New module structure using flip-chip technology for highspeed optical communication IC's
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S. Yamaguchi, Y. Imai, S. Kimura, and H. Tsunetsugu, "New module structure using flip-chip technology for highspeed optical communication IC's," IEEE MTT-S Int. Microwave Symp. Tech. Dig., pp.243-24G, 199G.
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IEEE MTT-S Int. Microwave Symp. Tech. Dig., Pp.243-24G, 199G.
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Yamaguchi, S.1
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