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IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2631-2639

InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHBTs

(6) Bolognesi, C R a Matine, N a Dvorak, M W a Yeo, P a Xu, X G a Watkins, S P a

a SIMON FRASER UNIVERSITY (Canada)

Author keywords

Heterojunction bipolar transistors (HBTs); Millimeter wave bipolar transistors

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; FREQUENCIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

GALLIUM ARSENIDE ANTIMONIDE; OSCILLATION FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035506734 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/16.960389 Document Type: Article

Times cited : (68)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.