40 Gbit/s decision IC using InP/InGaAs composite-collector heterojunction bipolar transistors

Electronics Letters

Volumn 35, Issue 14, 1999, Pages 1194-1195

  Sano, E ^a   Nakajima, H ^b   Watanabe, N ^b   Yamahata, S ^b  

^a NTT Corporation   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIM DEVICES; OLEFINS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

COMPOSITE COLLECTOR HETEROJUNCTION BIPOLAR TRANSISTORS; DECISION INTEGRATED CIRCUITS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032687272     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990798     Document Type: Article

References (6)

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2. WANG, K.-C. (Ed.): 'High-speed circuits for lightwave communications' (World Scientific Publishing Co., Singapore, 1999)
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5. WATANABE, N., KUMAR, S.A.K., YAMAHATA, S., and KOBAYASHI, T.: 'Annealing effect on C-doped InGaAs grown by metalorganic chemical vapor deposition', J. Cryst. Growth, 1998, 195, pp. 48-53
6. KURISHIMA, K., YAMAHATA, S., NAKAJIMA, H., ITO, H., and WATANABE, N.: 'Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBT's under bias and temperature stress', IEEE Electron Device Lett., 1998, 19, pp. 303-305