High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2625-2630

  Oka, T ^a   Hirata, K ^a   Suzuki, H ^a   Ouchi, K ^a   Uchiyama, H ^a   Taniguchi, T ^a   Mochizuki, K ^a   Nakamura, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

Gallium materials devices; Heterojunction bipolar transistors (HBTs)

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRODES; FLIP FLOP CIRCUITS; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SILICA;

INDIUM GALLIUM PHOSPHIDE; OSCILLATION FREQUENCY; TRANSIMPEDANCE AMPLIFIER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035506611     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960388     Document Type: Article

References (18)

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7. Low phase noise Ka-band VCO's using InGaP/GaAs HBT's and coplanar waveguide
8. A WSi base electrode and a heavily-doped thin base layer for high-speed and low-power InGaP/GaAs HBTs
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16. Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
17. 40-GHz frequency dividers with reduced power dissipation fabricated using high-speed small-emitter-area AlGaAs/InGaAs HBT's