67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 1, 2001, Pages 3-8

  Washio, Katsuyoshi ^a   Hayami, Reiko ^a   Ohue, Eiji ^a   Oda, Katsuya ^a   Tanabe, Masamichi ^a   Shimamoto, Hiromi ^a   Kondo, Masao ^a  

^a HITACHI LTD   (Japan)

Author keywords

Bipolar transistors; Emitter coupled logic; Epitaxial growth; Frequency conversion; Heterojunctions; Millimeter wave bipolar integrated circuits; Mimics; Optical communication

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; FLIP FLOP CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; LOGIC GATES; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

SILICON GERMANIDE; STATIC FREQUENCY DIVIDERS;

FREQUENCY DIVIDING CIRCUITS;

EID: 0034831823     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.899955     Document Type: Article

References (10)

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