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1
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0342343551
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Twenty-Gbit/s signal transmission using simple high-sensitivity optical receiver
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TuI3
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K. Hagimoto, Y. Miyamoto, T. Kataoka, H. Ichino, and O. Nakajima, "Twenty-Gbit/s signal transmission using simple high-sensitivity optical receiver" in OFC'92 Tech. Dig., TuI3, 1992, pp. 48.
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(1992)
OFC'92 Tech. Dig.
, pp. 48
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Hagimoto, K.1
Miyamoto, Y.2
Kataoka, T.3
Ichino, H.4
Nakajima, O.5
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2
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0002270710
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Uni-traveling-camer photodiodes
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UWA2-1
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T. Ishibashi, N. Shimin?, H. Ito, T. Nagatsuma, and T. Furuta, "Uni-traveling-camer photodiodes," in Tech. Dig. of Ultrafast Electronics and Optoelectronics (OSA Spring Topical Meeting), UWA2-1, pp. 166-168, 1997.
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(1997)
Tech. Dig. of Ultrafast Electronics and Optoelectronics (OSA Spring Topical Meeting)
, pp. 166-168
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Ishibashi, T.1
Shimin, N.2
Ito, H.3
Nagatsuma, T.4
Furuta, T.5
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3
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0031653214
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40 Gbit/s high sensitivity optical receiver with uni-traveling-camer photodiode acting as decision IC driver
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Y. Miyamoto, M. Yoneyama, K. Hagimoto, T. Ishibashi, and N. Shimizu, "40 Gbit/s high sensitivity optical receiver with uni-traveling-camer photodiode acting as decision IC driver," IEE Electron. Lett. vol. 34, no. 2, pp. 214-215, 1998.
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(1998)
IEE Electron. Lett.
, vol.34
, Issue.2
, pp. 214-215
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Miyamoto, Y.1
Yoneyama, M.2
Hagimoto, K.3
Ishibashi, T.4
Shimizu, N.5
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4
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0031238155
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A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level O.2-μm GaAs MESFET's
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T. Otsuji, M. Yoneyama, K. Murata, and E. Sano, "A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level O.2-μm GaAs MESFET's," IEEE J. Solid-state Circuits, vol. 32, no. 9, pp.1357-1362, 1997.
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(1997)
IEEE J. Solid-state Circuits
, vol.32
, Issue.9
, pp. 1357-1362
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Otsuji, T.1
Yoneyama, M.2
Murata, K.3
Sano, E.4
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5
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0031384650
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Optic4 repeater circuit design based on InAlAdnGaAs HEW digital IC technology
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M. Yoneyama, A. Sano, K. Hagimoto, T. Otsuji, K. Murata, Y. Imai, S. Yamaguchi, T. Enoki, and E. Sano, "Optic4 repeater circuit design based on InAlAdnGaAs HEW digital IC technology," IEEE Trans. on Microwave Theory and Tech., vol. 45, no. 12, pp. 2274-2282,1997.
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(1997)
IEEE Trans. on Microwave Theory and Tech.
, vol.45
, Issue.12
, pp. 2274-2282
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Yoneyama, M.1
Sano, A.2
Hagimoto, K.3
Otsuji, T.4
Murata, K.5
Imai, Y.6
Yamaguchi, S.7
Enoki, T.8
Sano, E.9
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6
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0000438343
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Electron diffusivity in p-InGaAs determined from pulse response of InPAnGaAs uni-traveling-carrier photodiodes
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to be published Feb.
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N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, "Electron diffusivity in p-InGaAs determined from pulse response of InPAnGaAs uni-traveling-carrier photodiodes," to be published in Applied Physics Letter, Feb. 200O.
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(2000)
Applied Physics Letter
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Shimizu, N.1
Watanabe, N.2
Furuta, T.3
Ishibashi, T.4
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7
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79952619166
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to be published in PRM
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H. Kitabayashi, Y. Umeda, T. Furuta, N. Watanabe, T. Akeyoshi, Y. Yamane, K. Murata, N. Shimizu, and T. Ishii, "Monolithic integration technology using InP-based HEMTs and a uni-traveling-carrier-photodiode for over 40 GHz digital OEIC," to be published in PRM, 200O.
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(2000)
Monolithic Integration Technology Using InP-based HEMTs and A Uni-traveling-carrier-photodiode for over 40 GHz Digital OEIC
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Kitabayashi, H.1
Umeda, Y.2
Furuta, T.3
Watanabe, N.4
Akeyoshi, T.5
Yamane, Y.6
Murata, K.7
Shimizu, N.8
Ishii, T.9
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8
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0029700787
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New module structure using flip-chip technology for high-speed optical communication IC's
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S. Yamaguchi, Y. Imai, S. Kimura, and H. Tsunetsugu, "New module structure using flip-chip technology for high-speed optical communication IC's," in IEEE MTT-S Int. Microwave Symp. Tech. Dig., pp. 243-246, 1996.
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(1996)
IEEE MTT-S Int. Microwave Symp. Tech. Dig.
, pp. 243-246
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Yamaguchi, S.1
Imai Kimura S, Y.2
Tsunetsugu, H.3
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9
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0030230129
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10-80-Gbitls highly extinctive electrooptic pulse pattern generation
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T. Otsuji, M. Yaita, T. Nagatsuma, and E. Sano, "10-80-Gbitls highly extinctive electrooptic pulse pattern generation," IEEE J. Selected Topics in Quantum Electronics, vol. 2, no.3, pp. 643-649, 1996.
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(1996)
IEEE J. Selected Topics in Quantum Electronics
, vol.2
, Issue.3
, pp. 643-649
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Otsuji, T.1
Yaita, M.2
Nagatsuma, T.3
Sano, E.4
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10
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0032646258
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45 Gbit/s decision IC using InAlAs/InGaAs/InP HEMTs
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K. Murata, T. Otsuji, and Y. Yamane, "45 Gbit/s decision IC using InAlAs/InGaAs/InP HEMTs," IEE Electron. Lett., vol. 35, no. 16, pp. 1379 - 1380, 1999.
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(1999)
IEE Electron. Lett.
, vol.35
, Issue.16
, pp. 1379-1380
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Murata, K.1
Otsuji, T.2
Yamane, Y.3
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11
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0000210633
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4O-Gbit/s TDM transmission technologies based on ultra-high-speed IC's
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Y. Miyamoto, M. Yoneyama, T. Otsuji, K. Yonenaga, N. Shimizu, "4O-Gbit/s TDM transmission technologies based on ultra-high-speed IC's, " IEEE J. Solid-state Circuits, vol. 34, no. 9, pp.1246 - 1253, 1999.
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(1999)
IEEE J. Solid-state Circuits
, vol.34
, Issue.9
, pp. 1246-1253
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Miyamoto, Y.1
Yoneyama, M.2
Otsuji, T.3
Yonenaga, K.4
Shimizu, N.5
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