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Volumn 1, Issue , 2000, Pages 345-348

40-Gbit/s monolithic digital OEIC module composed of uni-traveling-carrier photodiode and InP HEMT decision circuit

Author keywords

[No Author keywords available]

Indexed keywords

DECISION INTEGRATED CIRCUIT; OPTICALS DATA INTERFACE; UNITRAVELLING CARRIER PHOTODIODE;

EID: 0033694481     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (10)

References (11)
  • 1
    • 0342343551 scopus 로고
    • Twenty-Gbit/s signal transmission using simple high-sensitivity optical receiver
    • TuI3
    • K. Hagimoto, Y. Miyamoto, T. Kataoka, H. Ichino, and O. Nakajima, "Twenty-Gbit/s signal transmission using simple high-sensitivity optical receiver" in OFC'92 Tech. Dig., TuI3, 1992, pp. 48.
    • (1992) OFC'92 Tech. Dig. , pp. 48
    • Hagimoto, K.1    Miyamoto, Y.2    Kataoka, T.3    Ichino, H.4    Nakajima, O.5
  • 3
    • 0031653214 scopus 로고    scopus 로고
    • 40 Gbit/s high sensitivity optical receiver with uni-traveling-camer photodiode acting as decision IC driver
    • Y. Miyamoto, M. Yoneyama, K. Hagimoto, T. Ishibashi, and N. Shimizu, "40 Gbit/s high sensitivity optical receiver with uni-traveling-camer photodiode acting as decision IC driver," IEE Electron. Lett. vol. 34, no. 2, pp. 214-215, 1998.
    • (1998) IEE Electron. Lett. , vol.34 , Issue.2 , pp. 214-215
    • Miyamoto, Y.1    Yoneyama, M.2    Hagimoto, K.3    Ishibashi, T.4    Shimizu, N.5
  • 4
    • 0031238155 scopus 로고    scopus 로고
    • A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level O.2-μm GaAs MESFET's
    • T. Otsuji, M. Yoneyama, K. Murata, and E. Sano, "A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level O.2-μm GaAs MESFET's," IEEE J. Solid-state Circuits, vol. 32, no. 9, pp.1357-1362, 1997.
    • (1997) IEEE J. Solid-state Circuits , vol.32 , Issue.9 , pp. 1357-1362
    • Otsuji, T.1    Yoneyama, M.2    Murata, K.3    Sano, E.4
  • 6
    • 0000438343 scopus 로고    scopus 로고
    • Electron diffusivity in p-InGaAs determined from pulse response of InPAnGaAs uni-traveling-carrier photodiodes
    • to be published Feb.
    • N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, "Electron diffusivity in p-InGaAs determined from pulse response of InPAnGaAs uni-traveling-carrier photodiodes," to be published in Applied Physics Letter, Feb. 200O.
    • (2000) Applied Physics Letter
    • Shimizu, N.1    Watanabe, N.2    Furuta, T.3    Ishibashi, T.4
  • 10
    • 0032646258 scopus 로고    scopus 로고
    • 45 Gbit/s decision IC using InAlAs/InGaAs/InP HEMTs
    • K. Murata, T. Otsuji, and Y. Yamane, "45 Gbit/s decision IC using InAlAs/InGaAs/InP HEMTs," IEE Electron. Lett., vol. 35, no. 16, pp. 1379 - 1380, 1999.
    • (1999) IEE Electron. Lett. , vol.35 , Issue.16 , pp. 1379-1380
    • Murata, K.1    Otsuji, T.2    Yamane, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.