A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 10, 1998, Pages 1527-1535

  Murata, Koichi ^a,b,c,d,e   Otsuji, Taiichi ^a,b,c,f,g   Yoneyama, Mikio ^a,b,c,e,h   Tokumitsu, Masami ^a,b,c,i,j,k  

^a IEEE   (Japan)

^b NTT CORPORATION   (Japan)

^c NTT Electronics Technol Corporation ^*

^d NAGOYA UNIVERSITY   (Japan)

^e Institute of Electronics   (Japan)

^f KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^g TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^h KEIO UNIVERSITY   (Japan)

ⁱ UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^j Musashino Electrical Communication Lab   (Japan)

^k JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

more..

Author keywords

Decision IC; Flip flop; GaAs MESFET; Lightwave communication

Indexed keywords

BROADBAND AMPLIFIERS; FLIP FLOP CIRCUITS; GATES (TRANSISTOR); MESFET DEVICES; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM ARSENIDE;

DECISION INTEGRATED CIRCUITS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032187459     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.720399     Document Type: Article

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