Does line edge roughness matter?: FEOL and BEOL perspectives

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 1076-1085

  Lin, Qinghuang ^a   Black, Chuck ^a   Detavernier, Christophe ^a   Gignac, Lynne ^a   Guarini, Kathryn ^a   Herbst, Brian ^a   Kim, Hyungjun ^a   Oldiges, Philip ^b   Petrillo, Karen ^a   Sanchez, Martha ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

Atomic layer deposition; BEOL; Copper barrier layer; Device performance; Diblock copolymer self assembly; FEOL; Line edge roughness

Indexed keywords

BLOCK COPOLYMERS; COMPUTER SIMULATION; COPPER; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON SCATTERING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SURFACE ROUGHNESS; TRANSISTORS; X RAY DIFFRACTION ANALYSIS;

BACK END OF LINE; FRONT END OF LINE; LINE EDGE ROUGHNESS; PLASMA ENHANCED ATOMIC LAYER DEPOSITION;

PHOTORESISTS;

EID: 0141608654     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.487736     Document Type: Conference Paper

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